The emergence of GaN-based devices promises a revolution in areas requiring high performance electronics, such as high speed earth and space-based communication systems, advanced radar, integrated sensors, high temperature electronics, and utility power switching. The properties of this system make it ideally suited for operation at elevated temperatures and at voltage and current levels well beyond that accessible by Si. Recent improvements in material quality and device performance are rapidly opening the door to commercialization, and III-N technologies are demonstrating exciting developments of late. Though devices are entering commercialization, there are still considerable unknowns, particularly in the reliability field. Recent advances at the University of Florida will be detailed in this work.
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The emergence of GaN-based devices promises a revolution in areas requiring high performance electronics, such as high speed earth and space-based communication systems, advanced radar, integrated sensors, high temperature electronics, and utility power switching. The properties of this system make it ideally suited for operation at elevated temperatures and at voltage and current levels well beyond that accessible by Si. Recent improvements in material quality and device performance are rapidly opening the door to commercialization, and III-N technologies are demonstrating exciting developments of late. Though devices are entering commercialization, there are still considerable unknowns, particularly in the reliability field. Recent advances at the University of Florida will be detailed in this work.
Travis Anderson, a native of Miami, Florida, began his higher education at the Georgia Institute of Technology. He then enrolled in the Ph.D. program in at the University of Florida, joining Dr. Fan Ren¿s group. His research has focused on the maturation of GaN technology, studying novel sensors and transistors, system integration, and reliability.
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Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The emergence of GaN-based devices promises arevolution in areas requiring high performanceelectronics, such as high speed earth and space-basedcommunication systems, advanced radar, integratedsensors, high temperature electronics, and utilitypower switching. The properties of this system makeit ideally suited for operation at elevatedtemperatures and at voltage and current levels wellbeyond that accessible by Si. Recent improvements inmaterial quality and device performance are rapidlyopening the door to commercialization, and III-Ntechnologies are demonstrating exciting developmentsof late. Though devices are enteringcommercialization, there are still considerableunknowns, particularly in the reliability field.Recent advances at the University of Florida will bedetailed in this work. Nº de ref. del artículo: 9783639096767
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Taschenbuch. Condición: Neu. Advanced Packaging For Microelectronic and Microsystem Applications | With Emphasis on GaN Technology | Travis Anderson | Taschenbuch | Kartoniert / Broschiert | Englisch | 2008 | VDM Verlag Dr. Müller | EAN 9783639096767 | Verantwortliche Person für die EU: OmniScriptum GmbH & Co. KG, Bahnhofstr. 28, 66111 Saarbrücken, info[at]akademikerverlag[dot]de | Anbieter: preigu. Nº de ref. del artículo: 101698476
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