Artículos relacionados a ATOMISTIC SIMULATION OF NANOSTRUCTURED MATERIALS: The...

ATOMISTIC SIMULATION OF NANOSTRUCTURED MATERIALS: The Application of Monte Carlo and Molecular Dynamics - Tapa blanda

Zhu, Ronghua

 
9783639067668: ATOMISTIC SIMULATION OF NANOSTRUCTURED MATERIALS: The Application of Monte Carlo and Molecular Dynamics
Tapa blanda
ISBN 10: 3639067665 ISBN 13: 9783639067668
Editorial: VDM Verlag Dr. Müller, 2009

Sinopsis

Based on the multiresolution method, which combines the continuum mechanics, kinetic Monte Carlo method and molecular dynamics method, this book studies the nanostructured materials grown by quantum-dot self- assembly, mechanical properties of strained semiconductors, and mechanical properties of carbon nanotube reinforced composites. This book covers the following three main contributions: 1). Self- organization of semiconductors InAs/GaAs in Stranski- Krastanov growth mode is studied using kinetic Monte Carlo simulations method coupled with the Green¿s function solution for the elastic strain energy distribution; 2) Utilizing the basic continuum mechanics, we present a molecular dynamic prediction for the elastic stiffness C11, C12 and C44 in strained silicon and InAs as functions of the volumetric (misfit) strain; 3). Also using MD method, the carbon nanotube reinforced Epon 862 composite is studied. The stress-strain relations and the elastic Young¿s moduli along the longitudinal direction (parallel to CNT) are simulated with the results being also compared with those from the rule-of-mixture.

"Sinopsis" puede pertenecer a otra edición de este libro.

Reseña del editor

Based on the multiresolution method, which combines the continuum mechanics, kinetic Monte Carlo method and molecular dynamics method, this book studies the nanostructured materials grown by quantum-dot self- assembly, mechanical properties of strained semiconductors, and mechanical properties of carbon nanotube reinforced composites. This book covers the following three main contributions: 1). Self- organization of semiconductors InAs/GaAs in Stranski- Krastanov growth mode is studied using kinetic Monte Carlo simulations method coupled with the Green's function solution for the elastic strain energy distribution; 2) Utilizing the basic continuum mechanics, we present a molecular dynamic prediction for the elastic stiffness C11, C12 and C44 in strained silicon and InAs as functions of the volumetric (misfit) strain; 3). Also using MD method, the carbon nanotube reinforced Epon 862 composite is studied. The stress-strain relations and the elastic Young's moduli along the longitudinal direction (parallel to CNT) are simulated with the results being also compared with those from the rule-of-mixture.

Biografía del autor

Graduated from Dalian University of Technology, Dalian, P.R. China with his B.E. and M.E. in Civil Engineering in 2000 and 2003. Graduated from the University of Akron, Akron, OH, USA with his Ph.D. in Materials and Computer modeling in 2006.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
VDM Verlag Dr. Müller
Año de publicación
2009
Idioma
Inglés
ISBN 10 
3639067665
ISBN 13 
9783639067668
Encuadernación
Tapa blanda
Número de páginas
156
Contacto del fabricante
no disponible
Persona responsable
no disponible