Subvolume A of two subvolumes on Diffusion in Semiconductors and Non-Metallic Solids consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.
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Subvolume A of two subvolumes on Diffusion in Semiconductors and Non-Metallic Solids consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.
"Sobre este título" puede pertenecer a otra edición de este libro.
Librería: BUCHSERVICE / ANTIQUARIAT Lars Lutzer, Wahlstedt, Alemania
Condición: gut. 1998. Landolt-Börnstein. Group 3 Condensed matter; Vol. 33., Diffusion in semiconductors and non-metallic solids Subvol. A., Diffusion in semiconductors In deutscher Sprache. pages. Nº de ref. del artículo: BN425328
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