Study Of Photo Sensor Using Indium Doped Copper Selenide Thin Films - Tapa blanda

Jain, Arun; Gujarathi, Dhananjay

 
9783330064270: Study Of Photo Sensor Using Indium Doped Copper Selenide Thin Films
Tapa blanda
ISBN 10: 3330064277 ISBN 13: 9783330064270
Editorial: LAP LAMBERT Academic Publishing, 2017

Sinopsis

Thin film science has received tremendous attention in last five-six decades especially after the World war II, because of numerous and widespread applications of thin films in electronic industries, micro-electronics and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. Due to the potential applications, thin films of Indium doped CuSe have been extensively studied by doping N or P-type semiconducting material, so that they may be used in various solid state devices. From the present studies it is seen that there are great potentiality to prepare solar cell and barrier junctions with Cu1-xInxSe by thermal evaporation method by improving their diode quality after proper doping, annealing, reduction of interfacial layer and passivation of surface states etc. As the world moves towards realization of high efficiency photovoltaic cells, the race for intermediate defect band materials is on. Doping and nano technology are in the race to establish them as key to manufacturing such materials.

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Reseña del editor

Thin film science has received tremendous attention in last five-six decades especially after the World war II, because of numerous and widespread applications of thin films in electronic industries, micro-electronics and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. Due to the potential applications, thin films of Indium doped CuSe have been extensively studied by doping N or P-type semiconducting material, so that they may be used in various solid state devices. From the present studies it is seen that there are great potentiality to prepare solar cell and barrier junctions with Cu1-xInxSe by thermal evaporation method by improving their diode quality after proper doping, annealing, reduction of interfacial layer and passivation of surface states etc. As the world moves towards realization of high efficiency photovoltaic cells, the race for intermediate defect band materials is on. Doping and nano technology are in the race to establish them as key to manufacturing such materials.

Biografía del autor

Dr. A B Jain is working as a Asso. Prof. at Pratap College, Amalner since last 27 years. He has published many research papers in reputed Journals. Dr. D N Gujarathi is renowned Ass. Prof. and Researcher of Physics. He has total 25 years of Teaching and research experuebce. He is currently serving as a Director, BEE, at NM University, Jalgaon

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Editorial
LAP LAMBERT Academic Publishing
Año de publicación
2017
Idioma
Inglés
ISBN 10 
3330064277
ISBN 13 
9783330064270
Encuadernación
Tapa blanda
Número de páginas
168
Contacto del fabricante
no disponible
Persona responsable
no disponible