Device Physics, Modeling, Technology, and Analysis for Silicon MESFET - Tapa dura

Acerca del autor

Iraj Sadegh Amiri received his B. Sc (Applied Physics) from Public University of Oroumiyeh, Iran in 2001 and a gold medalist M. Sc. (Physics/Optics)) from University Technology Malaysia (UTM), in 2009. He was awarded a PhD degree in Physics (photonics) in Jan 2014. He has been doing research on several topics such as the optical soliton communications, laser physics, plasmonics photonics devices, nonlinear fiber optics, optoelectronics devices using 2D materials, waveguides, quantum cryptography and nanotechnology engineering.

Hossein Mohammadi was born in Shiraz, Iran, in September 1974. He received the B.Sc. degree from IAU, Dezful, Iran, in 1999, the M.Sc. degree from IAU, Arak, Iran, in 2007, and Ph.D. degree from national university of Malaysia in 2017 all in electrical engineering. He is currently lecturer of Shiraz Pasargad higher education institute in Iran. His research interests include micro and Nano electronics, compact modeling of MOSFET’s and SOI-MESFET’s.

Mahdiar Hosseinghadiry: His research includes VLSI modelling and design especially low power high speed circuits, nano-fabrication, graphene transistor modelling, and laser physics. He has published more than 50 ISI paper so far and he is currently doing research at department of innovation, Allseas Eng., Netherlands.

De la contraportada

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device.  The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.