Plasma Charging Damage - Tapa dura

Cheung, K. P.; Cheung, Kin P.

 
9781852331443: Plasma Charging Damage
Tapa dura
ISBN 10: 1852331445 ISBN 13: 9781852331443
Editorial: Springer, 2000

Sinopsis

In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.

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Reseña del editor

In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.

Reseña del editor

This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place.
Drawing on the author's wide range of experience in plasma science, processing technologies, device physics and reliability physics, the text includes information on: - plasma and mechanisms of plasma damage;
- wear-out and breakdown of thin gate-oxides;
- the impact of processing equipment on damage;
- methods of damage measurement;
- damage management; - gate-oxide scaling.

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Editorial
Springer
Año de publicación
2000
Idioma
Inglés
ISBN 10 
1852331445
ISBN 13 
9781852331443
Encuadernación
Tapa dura
Número de páginas
364
Contacto del fabricante
no disponible
Persona responsable
CMN Printpool Inh. Mathis Neumann
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Friedrich-Karl-Str. 9
Hamburg
Alemania

Otras ediciones populares con el mismo título

9781447110620: Plasma Charging Damage

Edición Destacada

ISBN 10:  1447110625 ISBN 13:  9781447110620
Editorial: Springer, 2012
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