Artículos relacionados a Nanoscale Transistors: Device Physics, Modeling and...
Sinopsis
Silicon CMOS technology continues to drive progress in electronics, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. A variety of new devices are emerging as candidates to replace MOSFETs and continue the trend downward to molecular dimensions. Nanoscale MOSFET engineering, is still governed by techniques originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, this timely reference presents a clear understanding of device physics at the nano/molecular scale.
"Sinopsis" puede pertenecer a otra edición de este libro.
Acerca del autor
Mark S. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests center on the physics of semiconductor devices, especially nanoscale transistors. His previous work includes studies of heterostructure devices, solar cells, heterojunction bipolar transistors and semiconductor lasers. During the course of his Purdue career, Lundstrom has served as director of the Optoelectronics Research Center and assistant dean of the Schools of Engineering. He is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for teaching and research ― most recently the 2002 IEEE Cledo Brunetti Award and the 2002 Semiconductor Research Corporation Technical Achievement Award for his work with his colleague, S. Datta, on nanoscale electronics.
Jing Guo is an assistant professor of Electrical and Computer Engineering at University of Florida, Gainesville. His has worked on the theory, modeling and simulation of a variety of nanotransistors, including silicon nanotransistors, carbon nanotube transistors, and single electron transistors, in close collaboration with experimentalists. His current research interests focus on modeling and simulation of nanoscale devices, carbon nanotube electronics and optoelectronics, quantum transport, physics of nanoscale transistors, and parallel computation.
De la contraportada
NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules.
The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices.
"Sobre este título" puede pertenecer a otra edición de este libro.
EUR 120,59
EUR 17,03 gastos de envío desde Estados Unidos de America a España
Destinos, gastos y plazos de envíoComprar nuevo
Ver este artículo
EUR 92,27
EUR 19,49 gastos de envío desde Alemania a España
Destinos, gastos y plazos de envíoOtras ediciones populares con el mismo título
Resultados de la búsqueda para Nanoscale Transistors: Device Physics, Modeling and...
Imagen del vendedor
Nanoscale Transistors
Impresión bajo demandaLibrería: moluna, Greven, Alemania
Calificación del vendedor: 4 de 5 estrellas
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents most recent developments on theory, modeling and simulation of nanoscale transistorsProvides tools necessary to push traditional electronic debvices to their limits and to develop new devices that will follow the MOSFETMark S. . Nº de ref. del artículo: 4174282
Cantidad disponible: Más de 20 disponibles
Imagen del vendedor
Nanoscale Transistors
Publicado por
Springer US Okt 2010, 2010
ISBN 10: 1441939156
ISBN 13: 9781441939159
Nuevo
Taschenbuch
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules 228 pp. Englisch. Nº de ref. del artículo: 9781441939159
Cantidad disponible: 2 disponibles
Imagen del vendedor
Nanoscale Transistors : Device Physics, Modeling and Simulation
Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
Calificación del vendedor: 5 de 5 estrellas
Condición: New. Nº de ref. del artículo: 11866416-n
Cantidad disponible: 15 disponibles
Imagen de archivo
Nanoscale Transistors: Device Physics, Modeling and Simulation
Librería: Best Price, Torrance, CA, Estados Unidos de America
Calificación del vendedor: 5 de 5 estrellas
Condición: New. SUPER FAST SHIPPING. Nº de ref. del artículo: 9781441939159
Cantidad disponible: 2 disponibles
Imagen del vendedor
Nanoscale Transistors : Device Physics, Modeling and Simulation
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph. Nº de ref. del artículo: 9781441939159
Cantidad disponible: 1 disponibles
Imagen de archivo
Nanoscale Transistors: Device Physics, Modeling and Simulation
Librería: Ria Christie Collections, Uxbridge, Reino Unido
Calificación del vendedor: 5 de 5 estrellas
Condición: New. In. Nº de ref. del artículo: ria9781441939159_new
Cantidad disponible: Más de 20 disponibles
Imagen del vendedor
Nanoscale Transistors : Device Physics, Modeling and Simulation
Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
Calificación del vendedor: 5 de 5 estrellas
Condición: As New. Unread book in perfect condition. Nº de ref. del artículo: 11866416
Cantidad disponible: 15 disponibles
Imagen del vendedor
Nanoscale Transistors
Publicado por
Springer US, Springer US Okt 2010, 2010
ISBN 10: 1441939156
ISBN 13: 9781441939159
Nuevo
Taschenbuch
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Neuware -Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 228 pp. Englisch. Nº de ref. del artículo: 9781441939159
Cantidad disponible: 2 disponibles
Imagen de archivo
Nanoscale Transistors
Publicado por
Springer-Verlag New York Inc., 2010
ISBN 10: 1441939156
ISBN 13: 9781441939159
Nuevo
Tapa blanda
Original o primera edición
Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Calificación del vendedor: 5 de 5 estrellas
Condición: New. Num Pages: 226 pages, 106 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 12. Weight in Grams: 327. . 2010. 1st ed. Softcover of orig. ed. 2006. Paperback. . . . . Nº de ref. del artículo: V9781441939159
Cantidad disponible: 15 disponibles
Imagen de archivo
Nanoscale Transistors
Librería: Books Puddle, New York, NY, Estados Unidos de America
Calificación del vendedor: 4 de 5 estrellas
Condición: New. pp. 228. Nº de ref. del artículo: 263094071
Cantidad disponible: 4 disponibles