Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices: 220 (NATO Science Series II: Mathematics, Physics and Chemistry) - Tapa blanda

Gusev, Evgeni

 
9781402043666: Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices: 220 (NATO Science Series II: Mathematics, Physics and Chemistry)
Tapa blanda
ISBN 10: 140204366X ISBN 13: 9781402043666
Editorial: Springer, 2008

Sinopsis

The goal of this NATO Advanced Research Workshop (ARW) entitled "Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices", which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

"Sinopsis" puede pertenecer a otra edición de este libro.

Reseña del editor

The goal of this NATO Advanced Research Workshop (ARW) entitled "Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices", which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Reseña del editor

The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
Springer
Año de publicación
2008
Idioma
Inglés
ISBN 10 
140204366X
ISBN 13 
9781402043666
Encuadernación
Tapa blanda
Número de páginas
508
Contacto del fabricante
no disponible
Persona responsable
CMN Printpool Inh. Mathis Neumann
https://www.also.com/ec/cms5/en_6000/6000/index.jsp

Friedrich-Karl-Str. 9
Hamburg
Alemania

Otras ediciones populares con el mismo título

9781402043659: Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices: 220 (NATO Science Series II: Mathematics, Physics and Chemistry)

Edición Destacada

ISBN 10:  1402043651 ISBN 13:  9781402043659
Editorial: Springer, 2006
Tapa dura