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Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator - Tapa blanda

Derbis, Richard M.

 
9781249830825: Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator
Tapa blanda
ISBN 10: 1249830826 ISBN 13: 9781249830825
Editorial: BiblioScholar, 2012

Sinopsis

The objective to this thesis was to improve the procedure for taking unltrafast, time-resolved measurements of photoluminescence from MWIR semiconductors. Previous work has used mode-locked titanium sapphire (Ti:Saph) laser to excite the semiconductor sample and to upconvert the photoluminescene from the semiconductor. Work completed in this thesis improved on the techniques developed during previous work. A synchronous Optical Parameter Oscillator (OPO) will be used to convert the Ti:Saph laser 0.830 micron into 1.3 micron signal and 2.3 micron idler eams. Whereas the Ti:Saph reference and signal beams were too energetic to excite the quantum well (QW) layers of certain MWIR opto-electronic semiconductor structures, the synchronous OPO allows investigation of the active layer by directly exciting the QWs. Photoluminescence was detected from an indium arsenide antimonide (InAsSb) sample with a peak wavelength of 3.8 micron. A detailed procedure for setup of the TRPL experiment using the synchronous OPO is provided.

"Sinopsis" puede pertenecer a otra edición de este libro.

Reseña del editor

The objective to this thesis was to improve the procedure for taking unltrafast, time-resolved measurements of photoluminescence from MWIR semiconductors. Previous work has used mode-locked titanium sapphire (Ti:Saph) laser to excite the semiconductor sample and to upconvert the photoluminescene from the semiconductor. Work completed in this thesis improved on the techniques developed during previous work. A synchronous Optical Parameter Oscillator (OPO) will be used to convert the Ti:Saph laser 0.830 micron into 1.3 micron signal and 2.3 micron idler eams. Whereas the Ti:Saph reference and signal beams were too energetic to excite the quantum well (QW) layers of certain MWIR opto-electronic semiconductor structures, the synchronous OPO allows investigation of the active layer by directly exciting the QWs. Photoluminescence was detected from an indium arsenide antimonide (InAsSb) sample with a peak wavelength of 3.8 micron. A detailed procedure for setup of the TRPL experiment using the synchronous OPO is provided.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
BiblioScholar
Año de publicación
2012
Idioma
Inglés
ISBN 10 
1249830826
ISBN 13 
9781249830825
Encuadernación
Tapa blanda
Número de páginas
58
Contacto del fabricante
no disponible
Persona responsable
no disponible