This book explains and evaluates methods used to grow and characterise low-dimensional semiconductor structures. It is based on course material developed in association with the London University Interdisciplinary Research Centre for Semiconductor Materials. It is written for graduates in physics, materials science and electrical engineering working in the research and development of semiconductors.
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This book explains and evaluates methods used to grow and characterise low-dimensional semiconductor structures. It is based on course material developed in association with the London University Interdisciplinary Research Centre for Semiconductor Materials. It is written for graduates in physics, materials science and electrical engineering working in the research and development of semiconductors.
The changes brought about by the applications of microelectronics in information technology have been based on the control of the electronic properties of semiconductor materials. During the last decade there have been dramatic advances in semiconductor growth techniques brought about by developments in the fields of high vacuum technology and organo-metallic chemistry. New growth techniques are capable of growing semiconductor structures with constituent layers only a few atoms thick. These "artificial" materials exhibit novel properties of interest not only for the fundamental science such as produced the Quantum Hall Effect, but also in device applications that now include High Mobility Transistors and Quantum Well Lasers. The new growth techniques such as Molecular Beam Epitaxy and Metallo-Organic Chemical Vapour Deposition have given rise to the need for new techniques to characterize the structures grown and to optimize the electronic and optical properties that arise from quantum confinement in such small scale structures. This volume is a collection of papers from the course on the growth and characteization of semiconductors, offered by Imperial College of Science, Technology and Medicine. The book aims to cover all the key areas in both the growth and characterization fields, but the x-ray and Raman techniques for characterization have been omitted.
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