GeSi Strained Layers and Their Applications, A Reprint Volume - Tapa dura

Stoneham, A. M.

9780750300247: GeSi Strained Layers and Their Applications, A Reprint Volume

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ISBN 10: 0750300248 ISBN 13: 9780750300247

Editorial: CRC Press, 1995

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^IGeSi Strained Layers and Their Applications provides a ready reference of seminal research papers in this technology for the practising researcher in electronic engineering and materials science. Silicon technology has dominated the field of microelectronics for the last twenty years. It is the major technology underlying commerical device applications. GeSi strained-layer heterostructure device technology has expanded the range of applications and reinforced the position of silicon as a leading edge material in the microelectronic arena. This book presents key papers on the following topics: * growth, nucleation, mechanical structure and stability * band structure, mobility, and optical properties * applications for GeSi strained-layer heterostructure device technology. The Editors describe the research foundations and introduce selected papers from the leading journals. The material presented represents the best of the experimental and theoretical research results reported over the last twenty years. It is enhanced by an up to date bibliography listing sources for further papers, for researchers who wish to investigate a particular topic in greater depth. It will form a key reference for two communities, communities who are not always able to keep up to date with research developments in the other's field. Marshall Stoneham is AEA Chief Scientist and has published over 300 papers and several books, including several in this area. An elected Fellow of the Royal Society and the first Massey Professor of Physics and Director of the Materials Research Centre at University College, London, he has a deep and abiding interest in the ways in which scientific information is disseminated to the wider scientific community. Suresh Jain is currently based at both Oxford University and AEA Harwell. he was previously Director of the Solid State laboratory for the Indian Government's Ministry of Defence. He is Consultant Editor in Device Physics for Institute of Physics Publishing and retains an active interest in research, indeed with over 200 important publications of his own in this subject area.

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Rese�a del editor

^IGeSi Strained Layers and Their Applications provides a ready reference of seminal research papers in this technology for the practising researcher in electronic engineering and materials science.
Silicon technology has dominated the field of microelectronics for the last twenty years. It is the major technology underlying commerical device applications. GeSi strained-layer heterostructure device technology has expanded the range of applications and reinforced the position of silicon as a leading edge material in the microelectronic arena.
This book presents key papers on the following topics:
* growth, nucleation, mechanical structure and stability
* band structure, mobility, and optical properties
* applications
for GeSi strained-layer heterostructure device technology.
The Editors describe the research foundations and introduce selected papers from the leading journals. The material presented represents the best of the experimental and theoretical research results reported over the last twenty years. It is enhanced by an up to date bibliography listing sources for further papers, for researchers who wish to investigate a particular topic in greater depth.
It will form a key reference for two communities, communities who are not always able to keep up to date with research developments in the other's field.
Marshall Stoneham is AEA Chief Scientist and has published over 300 papers and several books, including several in this area. An elected Fellow of the Royal Society and the first Massey Professor of Physics and Director of the Materials Research Centre at University College, London, he has a deep and abiding interest in the ways in which scientific information is disseminated to the wider scientific community.
Suresh Jain is currently based at both Oxford University and AEA Harwell. he was previously Director of the Solid State laboratory for the Indian Government's Ministry of Defence. He is Consultant Editor in Device Physics for Institute of Physics Publishing and retains an active interest in research, indeed with over 200 important publications of his own in this subject area.

Rese�a del editor

This volume presents 49 key papers published in recent years dealing with silicon-germanium strained layers and their applications. The papers have been selected by Professor Suresh Jain of Oxford University, who also provides a brief review of SiGe strained layers technology to place all the papers in an appropriate context. Papers are presented in three groups, dealing with growth and mechanical properties of strained layers, electronic and optical properties, and applications, notably in novel diode and transistor designs, and high performance optical detectors. An important aspect of the selection is the cross-disciplinary nature of the papers, presenting material from electronic engineers as well as from physicists and materials scientists. An extensive bibliography gives details of a further 250 papers on the subject.

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