Nonlinear Transistor Model Parameter Extraction Techniques Hardback (The Cambridge RF and Microwave Engineering Series) - Tapa dura

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Matthias Rudolph is the Ulrich-L.-Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology, Cottbus, Germany. Prior to this, he worked at the Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik (FBH), Berlin, where he was responsible for modeling of GaN HEMTs and GaAs HBTs and heading the low-noise components group.

Christian Fager is an Associate Professor at Chalmers University of Technology, Sweden, where he leads a research group focusing on energy efficient transmitters and power amplifiers for future wireless applications. In 2002 he received the Best Student Paper Award at the IEEE International Microwave Symposium for his research on uncertainties in transistor small signal models.

David E. Root is Agilent Research Fellow and Measurement and Modeling Sciences Architect at Agilent Technologies, Inc., where he works on nonlinear device and behavioral modeling, large-signal simulation, and nonlinear measurements for new technical capabilities and business opportunities. He is a Fellow of the IEEE and in 2007 he received the 2007 IEEE ARFTG Technology Award.