Nonlinear Transistor Model Parameter Extraction Techniques Hardback (The Cambridge RF and Microwave Engineering Series) - Tapa dura

'Modeling is at the heart of any modern design process and improvements in transistor modeling have made a significant, but often unrecognized, contribution to the wireless revolution impacting our daily lives. The authors and contributors have collaborated across academic and company boundaries to bring together the latest techniques in a comprehensive and practical review of transistor modeling. This book is destined to become the 'go to' reference on the subject.' Mark Pierpoint, Agilent Technologies

'Without accurate component models, even the most powerful circuit simulator cannot provide meaningful results. The old saying, 'Junk in-Junk out', summarizes the process. Nonlinear Transistor Model Parameter Extraction Techniques contains a wealth of theoretical and practical information. It should be read by every active RF/Microwave circuit ... as well as device designer.' Les Besser, author of COMPACT and founder of Besser Associates

'Nonlinear Transistor Model Parameter Extraction Techniques is an excellent book that covers this extremely important topic very well ... the editors have done a thorough job in putting together a complete summary of the important issues in this area. For a range of device technologies, the main themes that need to be addressed including measurement, extraction, DC and non-linear modelling, noise modelling, thermal issues and package modelling are covered in a clear but detailed manner, by experts in each area. I would highly recommend this title.' John Atherton, WIN Semiconductors

'... a very nice guide to how the critical issues of model parameter of extraction are being solved right now and so it is a great resource for designers and modeling groups.' IEEE Microwave Magazine

Matthias Rudolph is the Ulrich-L.-Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology, Cottbus, Germany. Prior to this, he worked at the Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik (FBH), Berlin, where he was responsible for modeling of GaN HEMTs and GaAs HBTs and heading the low-noise components group.