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Semiconductor Device Failure Analysis: Using Photon Emission Microscopy (Quality and Reliability Engineering Series) - Tapa dura
Sinopsis
The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
"Sinopsis" puede pertenecer a otra edición de este libro.
Acerca del autor
Wai Kin Chim is the author of Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy , published by Wiley.
De la contraportada
The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
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Semiconductor Device and Failure Analysis Using Photon Emmission Microscopy: Using Photon Emissing Microscopy (Quality and Reliability Engineering Series)
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Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
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Semiconductor Device and Failure Analysis - Using Photon Emmission Microscopy
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Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
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Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
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Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
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Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
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Semiconductor Device and Failure Analysis: Using Photon Emission Microscopy (Quality and Reliability Engineering)
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hardcover. Condición: Very Good. Semiconductor Device and Failure Analysis: Using Photon Emission Microscopy (Quality and Reliability Engineering) This book is in very good condition and will be shipped within 24 hours of ordering. The cover may have some limited signs of wear but the pages are clean, intact and the spine remains undamaged. This book has clearly been well maintained and looked after thus far. Money back guarantee if you are not satisfied. See all our books here, order more than 1 book and get discounted shipping. . Nº de ref. del artículo: 7719-9780471492405
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Semiconductor Device and Failure Analysis: Using Photon Emission Microscopy (Quality and Reliability Engineering)
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Semiconductor Device Analysis Using Photon Emission Microscopy
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