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Rapid Thermal Processing for Future Semiconductor Devices - Tapa blanda

 
9780444513397: Rapid Thermal Processing for Future Semiconductor Devices
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ISBN 10: 0444513396 ISBN 13: 9780444513397
Editorial: Elsevier Science, 2003

Sinopsis

This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.

"Sinopsis" puede pertenecer a otra edición de este libro.

Reseña del editor

This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.

This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
Elsevier Science
Año de publicación
2003
Idioma
Inglés
ISBN 10 
0444513396
ISBN 13 
9780444513397
Encuadernación
Tapa blanda
Número de páginas
160
Editor
Fukuda Hisashi
Contacto del fabricante
no disponible
Persona responsable
gpsr@libri.de
gpsr@libri.de

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