Very High Speed MOS Devices - Tapa dura

Sinopsis

This comprehensive work describes very high speed and very high performance MOS devices which are mainstream technologies in VLSI and ULSI research. The book is wide ranging, its scope covering basic subjects through to a variety of applications. All the authors are researchers and engineers from the Toshiba Corporation, a world leader in MOS device technology, especially in the CMOS area, and so leading technologies and supporting knowledge are thoroughly reviewed. The book begins with a review of the concept and historical background of MOS devices, followed by their basic operating principles and physical characteristics. Process and device tchnologies aiming at submicron-scale devices, simulation and CAD and circuit design for both logic and memory LSIs are explained in detail, using many diagrams and actual data. In particular, high speed MOS devices are considered at the system level, rather than the individual device or component level, in the achievement of overall high system speed and performance. Future trends and issues in MOS technology, including three-dimensional LSIs, are also described.

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