Hot-Carrier Effects in Mos Devices - Tapa dura

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The profusion of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing and other technological applications. Hot-carrier effects are rapidly moving out of the research lab and into the real world.
This book is derived from Dr. Takeda's book in Japanese, Hot-Carrier Effects (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takeda's original work was merely a starting point for developing this much more complete and fundamental text on increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices and the practical considerations related to hot carriers.
Hot-Carrier Effects in MOS Devices provides background information, clarifies important concepts, and presents the most recent findings in a readable form. Moreover, this book is not only indispensable for researches and graduate students, but also a highly useful reference for MOS device and process engineers.

|The profusion of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing and other technological applications. Hot-carrier effects are rapidly moving out of the research lab and into the real world.
This book is derived from Dr. Takeda's book in Japanese, Hot-Carrier Effects (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takeda's original work was merely a starting point for developing this much more complete and fundamental text on increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices and the practical considerations related to hot carriers.
Hot-Carrier Effects in MOS Devices provides background information, clarifies important concepts, and presents the most recent findings in a readable form. Moreover, this book is not only indispensable for researches and graduate students, but also a highly useful reference for MOS device and process engineers.