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Publicado por Springer, 2011
ISBN 10: 1441979573ISBN 13: 9781441979575
Librería: booksXpress, Bayonne, NJ, Estados Unidos de America
Libro
Hardcover. Condición: new.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: Books Puddle, New York, NY, Estados Unidos de America
Libro
Condición: New. pp. 360.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: Majestic Books, Hounslow, Reino Unido
Libro
Condición: New. pp. 360 290 Illus.
Publicado por Springer, 2007
ISBN 10: 0387966986ISBN 13: 9780387966984
Librería: True Oak Books, Highland, NY, Estados Unidos de America
Miembro de asociación: IOBA
Libro
Hardcover. Condición: Very Good. - Great overall condition. Minor cosmetic wear. No noteworthy blemishes. No writing.; Integrated Circuits And Systems.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: thebookforest.com, San Rafael, CA, Estados Unidos de America
Libro
hardcover. Condición: LikeNew. Page block firm and clean, binding unblemished, boards straight, without markings of any kind. Fine, like new condition. Previous owners name on the inside of front endpaper. Well packaged and promptly shipped from California. Partnered with Friends of the Library since 2010.
Publicado por Springer, 2008
ISBN 10: 038751323XISBN 13: 9780387513232
Librería: Midtown Scholar Bookstore, Harrisburg, PA, Estados Unidos de America
Libro
Paperback. Condición: Very Good. Very Good paperback with light shelfwear - NICE! Standard-sized.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: Basi6 International, Irving, TX, Estados Unidos de America
Libro
Condición: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: Romtrade Corp., STERLING HEIGHTS, MI, Estados Unidos de America
Libro
Condición: New. Brand New Original US Edition.We Ship to PO BOX Address also. EXPEDITED shipping option also available for faster delivery.This item may ship from the US or other locations in India depending on your location and availability.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: SMASS Sellers, IRVING, TX, Estados Unidos de America
Libro
Condición: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed. This item may ship from the US or our Overseas warehouse depending on your location and stock availability. We Ship to PO BOX Location also.
Publicado por Springer, 2010
ISBN 10: 144194124XISBN 13: 9781441941244
Librería: booksXpress, Bayonne, NJ, Estados Unidos de America
Libro Impresión bajo demanda
Soft Cover. Condición: new. This item is printed on demand.
Publicado por Springer, 2010
ISBN 10: 144194124XISBN 13: 9781441941244
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Libro
Condición: New.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: BennettBooksLtd, North Las Vegas, NV, Estados Unidos de America
Libro
Condición: New. New. In shrink wrap. Looks like an interesting title! 1.55.
Publicado por Springer US Nov 2010, 2010
ISBN 10: 144194124XISBN 13: 9781441941244
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Libro Impresión bajo demanda
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed to:-Meet the needs of a rapidly growing mobile cell phone market-Offset a significant increase in the power dissipation of high-end microprocessor units.Low power large capacity memories are a necessary component of low voltage LSIs. Many challenges arise in the process of achieving such memories as their devices and voltages are scaled down below 100nm and sub-1-V. A high signal-to-noise (S/N) ratio design is necessary to deal with small signal voltages from low-voltage memory cells in the presence of large noise sources in a high-density memory-cell array. Moreover, innovative circuits and devices are needed to resolve the increasing problems of leakage currents and variability in both speed and leakage. Since the solutions to these problems lie between different fields, (e.g., digital and analog, SRAM and DRAM) a multidisciplinary approach is needed.Ultra-Low Voltage Nano-Scale Memories is an authoritative monograph that addresses these challenges. This book is written for memory and circuit designers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs. Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs. 360 pp. Englisch.
Publicado por Springer New York, 2013
ISBN 10: 1461427940ISBN 13: 9781461427940
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents the first comprehensive reference to reliability and repair techniques for nano-scale memoriesCovers both the mathematical foundations and engineering applications of yield and reliability in nano-scale memoriesIncludes a variety o.
Publicado por Springer US, 2010
ISBN 10: 144194124XISBN 13: 9781441941244
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Discusses the emerging problems between the device, circuit, and system levels in terms of reliable high-speed operations of memory cells and peripheral logic circuitsPresents the essential differences in ultra-low voltage operations between DRAMs.
Publicado por Springer US, 2010
ISBN 10: 144194124XISBN 13: 9781441941244
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Libro
Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.
Publicado por Springer, 2010
ISBN 10: 144194124XISBN 13: 9781441941244
Librería: Revaluation Books, Exeter, Reino Unido
Libro
Paperback. Condición: Brand New. 400 pages. 9.25x6.10x0.82 inches. In Stock.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: booksXpress, Bayonne, NJ, Estados Unidos de America
Libro
Hardcover. Condición: new.
Publicado por Springer, 2011
ISBN 10: 1441979573ISBN 13: 9781441979575
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Libro
Condición: New.
Publicado por Springer, 2011
ISBN 10: 1441979573ISBN 13: 9781441979575
Librería: Ria Christie Collections, Uxbridge, Reino Unido
Libro Impresión bajo demanda
Condición: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: Ria Christie Collections, Uxbridge, Reino Unido
Libro Impresión bajo demanda
Condición: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Publicado por Springer, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Libro
Condición: New.
Publicado por Springer US, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Discusses the emerging problems between the device, circuit, and system levels in terms of reliable high-speed operations of memory cells and peripheral logic circuitsPresents the essential differences in ultra-low voltage operations between DRAMs.
Publicado por Springer US Aug 2007, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Libro Impresión bajo demanda
Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. 360 pp. Englisch.
Publicado por SPRINGER NATURE Jan 2011, 2011
ISBN 10: 1441979573ISBN 13: 9781441979575
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Libro Impresión bajo demanda
Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability. 218 pp. Englisch.
Publicado por Springer New York, 2011
ISBN 10: 1441979573ISBN 13: 9781441979575
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents the first comprehensive reference to reliability and repair techniques for nano-scale memoriesCovers both the mathematical foundations and engineering applications of yield and reliability in nano-scale memoriesIncludes a variety o.
Publicado por Springer, 2010
ISBN 10: 144194124XISBN 13: 9781441941244
Librería: ALLBOOKS1, Salisbury Plain, SA, Australia
Libro
Publicado por Springer US, 2007
ISBN 10: 0387333983ISBN 13: 9780387333984
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Libro
Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.
Publicado por Springer Nature Singapore, 2011
ISBN 10: 1441979573ISBN 13: 9781441979575
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Libro
Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.
Publicado por Springer, 2013
ISBN 10: 1461427940ISBN 13: 9781461427940
Librería: Mispah books, Redhill, SURRE, Reino Unido
Libro
Paperback. Condición: Like New. Like New. book.