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9781461427940: Nanoscale Memory Repair (Integrated Circuits and Systems)
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Written from years of experience with developing memories and low-voltage CMOS circuits, Nanoscale Memory Repair describes yield and reliability issues in terms of mathematics and engineering. Readers will find a detailed explanation of the various yield models and calculations.
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Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. As a result, repair techniques have been indispensable for nano-scale memories. Without these techniques, even modern MPUs/ SoCs, in which memories have dominated the area and performance, could not have been designed successfully.

This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability. 

  • Presents the first comprehensive reference to reliability and repair techniques for nano-scale memories;
  • Covers both the mathematical foundations and engineering applications of yield and reliability in nano-scale memories;
  • Includes a variety of practical circuits and logic, critical for higher yield and reliability, which have been proven successful during the authors’ extensive experience in developing memories and low-voltage CMOS circuits.
     
     


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  • EditorialSpringer
  • Año de publicación2013
  • ISBN 10 1461427940
  • ISBN 13 9781461427940
  • EncuadernaciónTapa blanda
  • Número de páginas228

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9781441979575: Nanoscale Memory Repair (Integrated Circuits and Systems)

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ISBN 10:  1441979573 ISBN 13:  9781441979575
Editorial: Springer, 2011
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  • 9781441979599: Nanoscale Memory Repair

    Springer, 2011
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Kiyoo Itoh
Publicado por Springer New York Feb 2013 (2013)
ISBN 10: 1461427940 ISBN 13: 9781461427940
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BuchWeltWeit Ludwig Meier e.K.
(Bergisch Gladbach, Alemania)

Descripción Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability. 228 pp. Englisch. Nº de ref. del artículo: 9781461427940

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Masashi Horiguchi|Kiyoo Itoh
Publicado por Springer New York (2013)
ISBN 10: 1461427940 ISBN 13: 9781461427940
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Descripción Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents the first comprehensive reference to reliability and repair techniques for nano-scale memoriesCovers both the mathematical foundations and engineering applications of yield and reliability in nano-scale memoriesIncludes a variety o. Nº de ref. del artículo: 4197776

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Kiyoo Itoh
Publicado por Springer New York (2013)
ISBN 10: 1461427940 ISBN 13: 9781461427940
Nuevo Taschenbuch Cantidad disponible: 1
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AHA-BUCH GmbH
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Descripción Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability. Nº de ref. del artículo: 9781461427940

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Horiguchi, Masashi (Author)/ Itoh, Kiyoo (Author)
Publicado por Springer (2013)
ISBN 10: 1461427940 ISBN 13: 9781461427940
Nuevo Paperback Cantidad disponible: 1
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Revaluation Books
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Descripción Paperback. Condición: Brand New. 228 pages. 9.25x6.10x0.52 inches. In Stock. Nº de ref. del artículo: zk1461427940

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