Publicado por Biblioscholar, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Condición: New.
Publicado por Biblioscholar, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: PBShop.store US, Wood Dale, IL, Estados Unidos de America
PAP. Condición: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Publicado por Biblioscholar, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: PBShop.store UK, Fairford, GLOS, Reino Unido
PAP. Condición: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Publicado por BiblioScholar, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: Ria Christie Collections, Uxbridge, Reino Unido
Condición: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Publicado por BiblioScholar 2012-12-05, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: Chiron Media, Wallingford, Reino Unido
Paperback. Condición: New.
Publicado por Biblioscholar, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: THE SAINT BOOKSTORE, Southport, Reino Unido
Paperback / softback. Condición: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
Publicado por LIGHTNING SOURCE INC, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: moluna, Greven, Alemania
Condición: New. KlappentextrnrnThe effects of radiation on semiconductors are extremely important to the Department of Defense since the majority of the defense informational, navigational and communications systems are now satellite-based. Due to the high radi.
Publicado por Creative Media Partners, LLC Dez 2012, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Taschenbuch. Condición: Neu. Neuware - The effects of radiation on semiconductors are extremely important to the Department of Defense since the majority of the defense informational, navigational and communications systems are now satellite-based. Due to the high radiation tolerance of gallium nitride and a plethora of high temperature, high power and high frequency applications, the prospect that gallium nitride based devices will become key components in a multitude of military satellite-based systems is highly probable. AlxGa1-xN/GaN HEMTs were irradiated at low temperature (~80 K) by 0.45 - 0.8 MeV electrons up to fluences of 1 1015 e-/cm2. Following irradiation, low temperature capacitance-voltage measurements were recorded providing fluence-dependent measurements; additionally low-temperature post-irradiation capacitance-voltage measurements were recorded at twenty-four hour intervals up to 168 hours in order to investigate the room temperature annealing process. Using previously irradiated devices, the effects of a 9 month room temperature anneal were also considered. Capacitance-voltage measurements indicate that low energy electron radiation results in an increase in the transistor channel drain current.
Publicado por Biblioscholar, 2012
ISBN 10: 1288405898 ISBN 13: 9781288405893
Librería: Mispah books, Redhill, SURRE, Reino Unido
paperback. Condición: Like New. Like New. book.