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Publicado por LAP LAMBERT Academic Publishing Aug 2012, 2012
ISBN 10: 3659208450ISBN 13: 9783659208454
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Libro Impresión bajo demanda
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -For specific technological applications, it is very important to control the electrical properties which can be adjusted by doping process. In general, the doping process is achieved by adding the dopants directly to the growth ampoules . It is quite hard to control the amount of impurity due to segregation and solubility problems. The ion implantation technique is simply the launching of atoms onto the surface of the material by bombardment of the solid with energetic ions and does not render these difficulties. The main advantage of this technique is that the doping atoms can be implanted in different concentrations, independent of their solubility in the target materials. Therefore, the material properties can be controlled by using the implantation technique. In this work, the effect of N- and Si-implantation on structural, electrical and optical properties of GaSe single crystals were extensively studied. This book is produced from my Ph.D thesis completed in the Middle East Technical University, Ankara, Turkey in 2003. 112 pp. Englisch.
Publicado por LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659208450ISBN 13: 9783659208454
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Libro Impresión bajo demanda
Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - For specific technological applications, it is very important to control the electrical properties which can be adjusted by doping process. In general, the doping process is achieved by adding the dopants directly to the growth ampoules . It is quite hard to control the amount of impurity due to segregation and solubility problems. The ion implantation technique is simply the launching of atoms onto the surface of the material by bombardment of the solid with energetic ions and does not render these difficulties. The main advantage of this technique is that the doping atoms can be implanted in different concentrations, independent of their solubility in the target materials. Therefore, the material properties can be controlled by using the implantation technique. In this work, the effect of N- and Si-implantation on structural, electrical and optical properties of GaSe single crystals were extensively studied. This book is produced from my Ph.D thesis completed in the Middle East Technical University, Ankara, Turkey in 2003.
Publicado por LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659208450ISBN 13: 9783659208454
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Karabulut OrhanThe author was born in Elazig, Turkey in 1972. He started M.Sc. program at Pamukkale University, Physics Department in 1995. He has earned his M.Sc. Degree in 1997. Then he joined the Physics Department of METU where h.
Publicado por Lap Lambert Academic Publishing, 2012
ISBN 10: 3659208450ISBN 13: 9783659208454
Librería: Revaluation Books, Exeter, Reino Unido
Libro
Paperback. Condición: Brand New. In Stock.