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Publicado por VDM Verlag Dr. Müller, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Libro
Condición: New.
Publicado por VDM Verlag Dr. Müller, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: PBShop.store US, Wood Dale, IL, Estados Unidos de America
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PAP. Condición: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Publicado por VDM Verlag, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: Ria Christie Collections, Uxbridge, Reino Unido
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Condición: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Publicado por VDM Verlag 2008-11, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: Chiron Media, Wallingford, Reino Unido
Libro
PF. Condición: New.
Publicado por VDM Verlag Dr. Müller, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The present work addresses the investigation ofhigh- dielectrics and their applicability inCMOS-devices, using metal-gate electrodes. Thecontents firstly include the deposition of zirconiumdioxide and hafnium dioxide from the gas phase, usingorganometallic precursors, and their physico-chemicalcharacterization. Furthermore, these material systemsare investigated regarding their thermodynamicalstability.In the following, MOS-capacitors are fabricated bythe selective deposition of gate electrodes made fromaluminum, molybdenum, nickel, or titanium-nitride,and characterized regarding their electrical behavior. Results within this work demonstrate that wellbalanced and correctly applied annealing of thedevices clearly improves electrical behavior. Weattribute these materials high potential to beapplied in near-future CMOS-technology. 180 pp. Englisch.
Publicado por VDM Verlag Dr. Müller, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Libro Impresión bajo demanda
Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The present work addresses the investigation ofhigh- dielectrics and their applicability inCMOS-devices, using metal-gate electrodes. Thecontents firstly include the deposition of zirconiumdioxide and hafnium dioxide from the gas phase, usingorganometallic precursors, and their physico-chemicalcharacterization. Furthermore, these material systemsare investigated regarding their thermodynamicalstability.In the following, MOS-capacitors are fabricated bythe selective deposition of gate electrodes made fromaluminum, molybdenum, nickel, or titanium-nitride,and characterized regarding their electrical behavior. Results within this work demonstrate that wellbalanced and correctly applied annealing of thedevices clearly improves electrical behavior. Weattribute these materials high potential to beapplied in near-future CMOS-technology.
Publicado por VDM Verlag Dr. Müller, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: PBShop.store UK, Fairford, GLOS, Reino Unido
Libro Impresión bajo demanda
PAP. Condición: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Publicado por VDM Verlag Dr. Müller, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Kartoniert / Broschiert. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The present work addresses the investigation ofhigh-? dielectrics and their applicability inCMOS-devices, using metal-gate electrodes. Thecontents firstly include the deposition of zirconiumdioxide and hafnium dioxide from the gas ph.
Publicado por VDM Verlag Dr. Müller, 2008
ISBN 10: 3836465299ISBN 13: 9783836465298
Librería: Mispah books, Redhill, SURRE, Reino Unido
Libro
Paperback. Condición: Like New. Like New. book.