Tipo de artículo
Condición
Encuadernación
Más atributos
Ubicación del vendedor
Valoración de los vendedores
Publicado por Éditions universitaires européennes, 2017
ISBN 10: 3639607961ISBN 13: 9783639607963
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Libro
Condición: New.
Publicado por à ditions universitaires europà ennes, 2017
ISBN 10: 3639607961ISBN 13: 9783639607963
Librería: Ria Christie Collections, Uxbridge, Reino Unido
Libro Impresión bajo demanda
Condición: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Publicado por Editions universitaires europeennes 2017-02, 2017
ISBN 10: 3639607961ISBN 13: 9783639607963
Librería: Chiron Media, Wallingford, Reino Unido
Libro
PF. Condición: New.
Publicado por Éditions Universitaires Européennes Feb 2017, 2017
ISBN 10: 3639607961ISBN 13: 9783639607963
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Libro Impresión bajo demanda
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -As technology scaling is pushing device dimensions into sub-0.1 µm regime, short channel effects and reliability issues have become areas of severe concern. Since conventional gate oxide thickness scaling gives rise to higher gate leakage, alternative approaches such as the use of gate engineering to alleviate these concerns will be a critical part of device design. The continuous downscaling of FET-based technology has made it attractive for system-on-chip applications, where the analog circuits are realized with the digital systems in the same integrated circuit to reduce the cost and improve the performance. But conventional FET-based technology is facing greater challenges in terms of scaling due to reduced gate control, increased short-channel effects (SCEs) and high leakage currents. New designs, approaches and techniques are required to overcome these effects and limitations in order to improve the electrical performance for Large Scale Circuit Integration (LSCI) applications. 52 pp. Englisch.
Publicado por Editions universitaires europeennes, 2010
ISBN 10: 6131551391ISBN 13: 9786131551390
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Libro
Condición: New.
Publicado por LAP LAMBERT Academic Publishing, 2021
ISBN 10: 620319705XISBN 13: 9786203197051
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Libro
Condición: New.
Publicado por Éditions Universitaires Européennes, 2017
ISBN 10: 3639607961ISBN 13: 9783639607963
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Libro Impresión bajo demanda
Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - As technology scaling is pushing device dimensions into sub-0.1 µm regime, short channel effects and reliability issues have become areas of severe concern. Since conventional gate oxide thickness scaling gives rise to higher gate leakage, alternative approaches such as the use of gate engineering to alleviate these concerns will be a critical part of device design. The continuous downscaling of FET-based technology has made it attractive for system-on-chip applications, where the analog circuits are realized with the digital systems in the same integrated circuit to reduce the cost and improve the performance. But conventional FET-based technology is facing greater challenges in terms of scaling due to reduced gate control, increased short-channel effects (SCEs) and high leakage currents. New designs, approaches and techniques are required to overcome these effects and limitations in order to improve the electrical performance for Large Scale Circuit Integration (LSCI) applications.
Publicado por LAP Lambert Academic Publishing, 2013
ISBN 10: 3659333336ISBN 13: 9783659333330
Librería: Ria Christie Collections, Uxbridge, Reino Unido
Libro Impresión bajo demanda
Condición: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Publicado por LAP Lambert Academic Publishing 2013-01, 2013
ISBN 10: 3659333336ISBN 13: 9783659333330
Librería: Chiron Media, Wallingford, Reino Unido
Libro
PF. Condición: New.
Publicado por LAP LAMBERT Academic Publishing, 2013
ISBN 10: 3659333336ISBN 13: 9783659333330
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Libro
Condición: New.
Publicado por Éditions universitaires européennes, 2017
ISBN 10: 3639607961ISBN 13: 9783639607963
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: LAKHDAR NacereddineNacereddine Lakhdar is Doctor in Electronics, an associate professor in faculty of technology, department of electrical engineering at university of El Oued, Algeria. His research interests are in fields of Photovo.
Publicado por LAP LAMBERT Academic Publishing Jan 2013, 2013
ISBN 10: 3659333336ISBN 13: 9783659333330
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Libro Impresión bajo demanda
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -III-V materials can play a major role along with Si in future logic and analog submicron devices. In this book, new approaches and designs of GaN-MESFET called multigate GaN-MESFETs and their 2-D analytical and numerical analysis have been proposed and investigated in order to improve the SCEs for future power switching and digital gate devices. It has been analyzed that the Dual Material design offers superior characteristics as compared to single material gate devices. In addition, MOGAs- based approaches are proposed to optimize the different designs in term of subthreshold and analog performances for high speed submicron digital applications and to search for optimal electrical and dimensional parameters to obtain better electrical performance of the device for analog and digital circuit applications 140 pp. Englisch.
Publicado por Éditions universitaires européennes, 2010
ISBN 10: 6131551391ISBN 13: 9786131551390
Librería: moluna, Greven, Alemania
Libro
Condición: New.
Publicado por LAP LAMBERT Academic Publishing, 2013
ISBN 10: 3659333336ISBN 13: 9783659333330
Librería: PBShop.store US, Wood Dale, IL, Estados Unidos de America
Libro Impresión bajo demanda
PAP. Condición: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Publicado por LAP LAMBERT Academic Publishing, 2021
ISBN 10: 620319705XISBN 13: 9786203197051
Librería: GF Books, Inc., Hawthorne, CA, Estados Unidos de America
Libro
Condición: Fine. Book is in Used-LikeNew condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear.
Publicado por LAP LAMBERT Academic Publishing, 2021
ISBN 10: 620319705XISBN 13: 9786203197051
Librería: GF Books, Inc., Hawthorne, CA, Estados Unidos de America
Libro
Condición: Very Good. Book is in Used-VeryGood condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear and contain very limited notes and highlighting.
Publicado por LAP LAMBERT Academic Publishing, 2021
ISBN 10: 620319705XISBN 13: 9786203197051
Librería: GF Books, Inc., Hawthorne, CA, Estados Unidos de America
Libro
Condición: New. Book is in NEW condition.
Publicado por LAP LAMBERT Academic Publishing, 2021
ISBN 10: 620319705XISBN 13: 9786203197051
Librería: Books Unplugged, Amherst, NY, Estados Unidos de America
Libro
Condición: Good. Buy with confidence! Book is in good condition with minor wear to the pages, binding, and minor marks within.
Publicado por LAP LAMBERT Academic Publishing, 2021
ISBN 10: 620319705XISBN 13: 9786203197051
Librería: Book Deals, Tucson, AZ, Estados Unidos de America
Libro
Condición: New. New! This book is in the same immaculate condition as when it was published.
Publicado por LAP LAMBERT Academic Publishing, 2021
ISBN 10: 620319705XISBN 13: 9786203197051
Librería: Book Deals, Tucson, AZ, Estados Unidos de America
Libro
Condición: Fine. Like New condition. Great condition, but not exactly fully crisp. The book may have been opened and read, but there are no defects to the book, jacket or pages.
Publicado por LAP LAMBERT Academic Publishing, 2013
ISBN 10: 3659333336ISBN 13: 9783659333330
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Libro Impresión bajo demanda
Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - III-V materials can play a major role along with Si in future logic and analog submicron devices. In this book, new approaches and designs of GaN-MESFET called multigate GaN-MESFETs and their 2-D analytical and numerical analysis have been proposed and investigated in order to improve the SCEs for future power switching and digital gate devices. It has been analyzed that the Dual Material design offers superior characteristics as compared to single material gate devices. In addition, MOGAs- based approaches are proposed to optimize the different designs in term of subthreshold and analog performances for high speed submicron digital applications and to search for optimal electrical and dimensional parameters to obtain better electrical performance of the device for analog and digital circuit applications.
Publicado por LAP LAMBERT Academic Publishing, 2013
ISBN 10: 3659333336ISBN 13: 9783659333330
Librería: PBShop.store UK, Fairford, GLOS, Reino Unido
Libro Impresión bajo demanda
PAP. Condición: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Publicado por LAP LAMBERT Academic Publishing, 2013
ISBN 10: 3659333336ISBN 13: 9783659333330
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: LAKHDAR NacereddineN. Lakhdar received the M.Sc. PhD degrees in electronics from university of Batna in 2008 and 2012, respectively. He is, currently, Ass. Prof at University of El-Ouad. His research interests are in fields of Nano a.
Publicado por LAP LAMBERT Academic Publishing, 2021
ISBN 10: 620319705XISBN 13: 9786203197051
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: HIMA AbdelkaderAbdelkader HIMA and Nacereddine LAKHDAR are Doctor and Professor in Electronics, respectively. They are from faculty of technology, department of electrical engineering at University of El Oued, Algeria. Their research.
Publicado por Edicoes Nosso Conhecimento, 2021
ISBN 10: 6204266977ISBN 13: 9786204266978
Librería: moluna, Greven, Alemania
Libro
Condición: New.
Publicado por Editions Notre Savoir, 2021
ISBN 10: 6204266950ISBN 13: 9786204266954
Librería: moluna, Greven, Alemania
Libro
Condición: New.
Publicado por Edizioni Sapienza, 2021
ISBN 10: 6204266969ISBN 13: 9786204266961
Librería: moluna, Greven, Alemania
Libro
Condición: New.
Publicado por Ediciones Nuestro Conocimiento, 2021
ISBN 10: 6204266942ISBN 13: 9786204266947
Librería: moluna, Greven, Alemania
Libro
Condición: New.
Publicado por Verlag Unser Wissen, 2021
ISBN 10: 6204266934ISBN 13: 9786204266930
Librería: moluna, Greven, Alemania
Libro Impresión bajo demanda
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Die Technologien fuer erneuerbare Energien entwickeln sich aufgrund der internationalen Nachfrage nach elektrischer Energie und der Verknappung umweltschaedlicher fossiler Energietraeger exponentiell. Seit einiger Zeit entwickeln sich die Forschungen auf dem G.
Publicado por Editions universitaires europeennes, 2010
ISBN 10: 6131551391ISBN 13: 9786131551390
Librería: dsmbooks, Liverpool, Reino Unido
Libro
Paperback. Condición: Like New. Like New. book.