Gastos de envío:
EUR 14,02
De China a Estados Unidos de America
Descripción paperback. Condición: New. Paperback. Pub Date: 2020-10-01 Pages: 326 Language: Chinese Publisher: National Defense Industry Press Transistor Nonlinear Model Parameter Extraction Technology aims to provide a comprehensive overview of transistor model parameter extraction: On the one hand. the basic premise is the parameter The extraction is as important as the establishment of a physical model based on itself; on the other hand. even for different technologies. the extraction methods are often based on the same ideas a. Nº de ref. del artículo: NV037817