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Thermoelectric materials are more efficient at higher temperatures due to higher Carnot Efficiency. Nevertheless, its practical high temperature use is still limited due to the expensive surface protection coating required to prevent oxidation and vaporization. Zinc Oxide (ZnO), a cheap metal oxide with high melting temperature and chemical inertness, is a good candidate to solve this problem. ZnO is a semiconductive oxide but when Zn is substituted by Aluminium (Al), the electrical conductivity increases. However, when Al-doping is increased to above 2mol%, ZnAl2O4 spinel phase will be formed. This spinel phase reduces the efficiency of ZnO. In this book, we show that the solubility of Al2O3 in ZnO by can be increased by introducing NiO, which has dual valency, similar to that of Al and Zn, thus obtaining a thermoelectric material that could be used at high temperatures.
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Jingfeng Huang is pursuing a PhD at Nanyang Technological University (NTU), Singapore under Professor Alfred I.Y. Tok. In his NTU undergraduate years, he worked under Prof H.H. Hng and has spent a semester at Georgia Institute of Technology. He then joined GLOBALFOUNDRIES Singapore as a semiconductor process engineer before returning to research.
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- EditorialLAP LAMBERT Academic Publishing
- Año de publicación2013
- ISBN 10 3659438766
- ISBN 13 9783659438769
- EncuadernaciónTapa blanda
- Número de páginas80
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Nanostructured ZnO Thermoelectric Materials for Microelectronics
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Descripción Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Thermoelectric materials are more efficient at higher temperatures due to higher Carnot Efficiency. Nevertheless, its practical high temperature use is still limited due to the expensive surface protection coating required to prevent oxidation and vaporization. Zinc Oxide (ZnO), a cheap metal oxide with high melting temperature and chemical inertness, is a good candidate to solve this problem. ZnO is a semiconductive oxide but when Zn is substituted by Aluminium (Al), the electrical conductivity increases. However, when Al-doping is increased to above 2mol%, ZnAl2O4 spinel phase will be formed. This spinel phase reduces the efficiency of ZnO. In this book, we show that the solubility of Al2O3 in ZnO by can be increased by introducing NiO, which has dual valency, similar to that of Al and Zn, thus obtaining a thermoelectric material that could be used at high temperatures. 80 pp. Englisch. Nº de ref. del artículo: 9783659438769
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Descripción PAP. Condición: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Nº de ref. del artículo: L0-9783659438769
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Nanostructured ZnO Thermoelectric Materials for Microelectronics
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ISBN 10: 3659438766
ISBN 13: 9783659438769
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Descripción Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Thermoelectric materials are more efficient at higher temperatures due to higher Carnot Efficiency. Nevertheless, its practical high temperature use is still limited due to the expensive surface protection coating required to prevent oxidation and vaporization. Zinc Oxide (ZnO), a cheap metal oxide with high melting temperature and chemical inertness, is a good candidate to solve this problem. ZnO is a semiconductive oxide but when Zn is substituted by Aluminium (Al), the electrical conductivity increases. However, when Al-doping is increased to above 2mol%, ZnAl2O4 spinel phase will be formed. This spinel phase reduces the efficiency of ZnO. In this book, we show that the solubility of Al2O3 in ZnO by can be increased by introducing NiO, which has dual valency, similar to that of Al and Zn, thus obtaining a thermoelectric material that could be used at high temperatures. Nº de ref. del artículo: 9783659438769
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Nanostructured ZnO Thermoelectric Materials for Microelectronics
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(2013)
ISBN 10: 3659438766
ISBN 13: 9783659438769
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Descripción Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Huang JingfengJingfeng Huang is pursuing a PhD at Nanyang Technological University (NTU), Singapore under Professor Alfred I.Y. Tok. In his NTU undergraduate years, he worked under Prof H.H. Hng and has spent a semester at Georgia In. Nº de ref. del artículo: 158426350
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