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The Thermoballistic Transport Model: A Novel Approach to Charge Carrier Transport in Semiconductors: 259 (Springer Tracts in Modern Physics) - Tapa dura
THE BOOK PRESENTS A COMPREHENSIVE SURVEY OF THE THERMOBALLISTIC APPROACH TO CHARGE CARRIER TRANSPORT IN SEMICONDUCTORS. THIS SEMI-CLASSICAL APPROACH, WHICH THE AUTHORS HAVE DEVELOPED OVER THE PAST DECADE, BRIDGES THE GAP BETWEEN THE OPPOSING DRIFT-DIFFUSION AND BALLISTIC MODELS OF CARRIER TRANSPORT. WHILE INCORPORATING BASIC FEATURES OF THE LATTER TWO MODELS, THE PHYSICAL CONCEPT UNDERLYING THE THERMOBALLISTIC APPROACH CONSTITUTES A NOVEL, UNIFYING SCHEME. IT IS BASED ON THE INTRODUCTION OF "BALLISTIC CONFIGURATIONS" ARISING FROM A RANDOM PARTITIONING OF THE LENGTH OF A SEMICONDUCTING SAMPLE INTO BALLISTIC TRANSPORT INTERVALS. STOCHASTIC AVERAGING OF THE BALLISTIC CARRIER CURRENTS OVER THE BALLISTIC CONFIGURATIONS RESULTS IN A POSITION-DEPENDENT THERMOBALLISTIC CURRENT, WHICH IS THE KEY ELEMENT OF THE THERMOBALLISTIC CONCEPT AND FORMS THE POINT OF DEPARTURE FOR THE CALCULATION OF ALL RELEVANT TRANSPORT PROPERTIES. IN THE BOOK, THE THERMOBALLISTIC CONCEPT AND ITS IMPLEMENTATION ARE DEVELOPED IN GREAT DETAIL AND SPECIFIC EXAMPLES OF INTEREST TO CURRENT RESEARCH IN SEMICONDUCTOR PHYSICS AND SPINTRONICS ARE WORKED OUT.
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The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.
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- EditorialSpringer
- Año de publicación2014
- ISBN 10 3319059238
- ISBN 13 9783319059235
- EncuadernaciónTapa dura
- Número de páginas164
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The Thermoballistic Transport Model: A Novel Approach to Charge Carrier Transport in Semiconductors (Springer Tracts in Modern Physics) by Lipperheide, Reinhard, Wille, Uwe [Hardcover ]
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The Thermoballistic Transport Model: A Novel Approach to Charge Carrier Transport in Semiconductors (Springer Tracts in Modern Physics, 259)
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The Thermoballistic Transport Model : A Novel Approach to Charge Carrier Transport in Semiconductors
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ISBN 13: 9783319059235
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Descripción Condición: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book. Nº de ref. del artículo: ria9783319059235_lsuk
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The Thermoballistic Transport Model
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Descripción Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of 'ballistic configurations' arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out. 164 pp. Englisch. Nº de ref. del artículo: 9783319059235
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The Thermoballistic Transport Model
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ISBN 10: 3319059238
ISBN 13: 9783319059235
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Descripción Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents the thermoballistic approach as a novel and original way of calculationsTreats specific examples of current research in semiconductor physics and spintronicsDevelops the formalism systematically, step-by-step, to make it easily com. Nº de ref. del artículo: 4497413
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The Thermoballistic Transport Model : A Novel Approach to Charge Carrier Transport in Semiconductors
Publicado por
Springer International Publishing
(2014)
ISBN 10: 3319059238
ISBN 13: 9783319059235
Nuevo
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Cantidad disponible: 1
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Descripción Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of 'ballistic configurations' arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out. Nº de ref. del artículo: 9783319059235
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