This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
She had a post-doc at the University of Florida, Department of Material Science and Engineering (www.mse.ufl.edu) and she is now visitor scientist at PSI and ETH Zurich in the TOMCAT group (www.psi.ch/sls/tomcat).
She was in the local organizers committee and editorial board of IBMM conference 2006 (Taormina, Italy), program chair of the international IEEE NMDC conference 2014 (Aci Castello, Italy). She was web designer and editor of the group web site http://www.matis.imm.cnr.it. She was responsible for many reach-out and divulgation activities, such as “Nanergame , awarded at EMRS 2014 in the reach-out competition.
She taught Physics, Nanotechnology and Materials Science Lab., she did professional training for SEM, electrical characterization, ion beam analyses and ion implantation, she was tutor of about 20 students (master and PhD). Presenting authors and invited speakers in more than 20 international conferences about Ion Beam and Materials Science; co-author of more than 50 publications in international journals; Referee of papers in Nuclear Instruments and Methods B, Materials Science and Engineering B, Applied Physics Letters, Journal of Applied Physics, Physics Review B, Nanotechnology, Applied Physics A, Electrochemical and Solid-State Letters, Materials Science Letters, Japanese Applied Physics Express.
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Descripción Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Englisch. Nº de ref. del artículo: 9780128019351
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Descripción Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials behavior in response. Nº de ref. del artículo: 594360721
Descripción Buch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Nº de ref. del artículo: 9780128019351
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