gusev evgeni (124 resultados)

Condición: New. Brand New. Soft Cover International Edition. Different ISBN and Cover Image. Priced lower than the standard editions which is usually intended to make them more affordable for students abroad. The core content of the book is generally the same as the standard edition. The country selling restrictions may be printed on the book but is no problem for the self-use. This Item maybe shipped from US or any other country as we have multiple locations worldwide.

Condición: New. pp. ix + 207 143 Illus.

16 x 23 cm. XII, 492 S. XI, 492 p. Softcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. (NATO Science Series II: Mathematics, Physics and Chemistry). Sprache: Englisch.

Condición: New. In.

Condición: Usado - bueno.

Condición: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condición: Sehr gut. Zustand: Sehr gut | Seiten: 314 | Sprache: Englisch | Produktart: Sonstiges.

Condición: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condición: New. In.

Hardcover. Condición: Very Good. AS NEW: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices HC 1998 Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47) 1998th Edition by Eric Garfunkel (Editor), Evgeni Gusev (Editor), Alexander Vul' (Editor) OUR REFERENCE:128B3-0792350073-HC-2P2-lb-Wht-B45 DESCRIPTION An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. Product details Publisher &#8207; : &#8206; Springer; 1998th edition (March 31, 1998) Language &#8207; : &#8206; English Hardcover &#8207; : &#8206; 518 pages ISBN-10 &#8207; : &#8206; 0792350073 ISBN-13 &#8207; : &#8206; 978-0792350071.

Condición: New. In.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The high level of attention and interest of the global community to NANO science and technology to a large extent is linked to the GIGAntic challenges for the c- tinuing growth of information technology, which sparked an unprecedented level of interdisciplinary and international cooperation among industrial and academic researchers, companies, IT market rivals, and countries, including former political and military rivals . Microelectronics technologies have reached a new stage in their development: The latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new ma- rials are being introduced into microelectronics manufacture at an unprecedented rate , and alternative technologies to mainstream complementary metal-oxide sem- conductors (CMOSs) are being considered . The very dynamic stage of science and technology related to the advanced and future electronics and photonics creates a growing gap between the large number of rapid publications and nanotechnology highlights in media on one side and fundamental understanding of underlying phenomena and an adequate evaluation of scientific discoveries and technological innovations on the other side. Writing a tutorial book on fundamentals of science and technology for electronics at this time is almost the same level of challenge as writing a history book during a revolution.