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Robust SRAM Designs and Analysis

JAWAR SINGH

2 valoraciones por Goodreads
ISBN 10: 149390244X / ISBN 13: 9781493902446
Editorial: Springer, 2014
Nuevos Condición: NEW Encuadernación de tapa blanda
Librería: Herb Tandree Philosophy Books (Stroud, GLOS, Reino Unido)

Librería en AbeBooks desde: 30 de septiembre de 1997

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9781493902446 This listing is a new book, a title currently in-print which we order directly and immediately from the publisher. N° de ref. de la librería HTANDREE0728842

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Título: Robust SRAM Designs and Analysis

Editorial: Springer

Año de publicación: 2014

Encuadernación: Paperback

Condición del libro:NEW

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Sinopsis:

This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.

  • Provides a complete and concise introduction to SRAM bitcell design and analysis;
  • Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;
  • Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;
  • Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

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