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Optics and Photonics Series: GaAs photocathode(Chinese Edition)

CHANG BEN KANG

ISBN 10: 7030356969 / ISBN 13: 9787030356963
Nuevos Condición: New Encuadernación de tapa dura
Librería: liu xing (JiangSu, JS, China)

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Ship out in 2 business day, And Fast shipping, Free Tracking number will be provided after the shipment.By HardCover. Pub Date: December 2012 Pages: 400 Language: Chinese in Publisher: Science Press of Optics and Photonics Series: GaAs photocathode Author assume national research summary discusses GaAs photocathode monographs. book a total Chapter 8. GaAs and GaAlAs material and photocathode overview of the development of three generations of image intensifier; research the GaAs photocathode photoemission spectroscopy response theory. more than the amount of information to the monitoring and control and evaluation system. the activation process and its optimization ; doped GaAs photocathode becomes physical concept is proposed to explore the reflection and transmission becomes doped GaAs photocathode theory. three generations of image intensifier in practice; final study for the new generation of low light level image intensifier The GaAs photocathode Retrospect and Prospect. Contents: Chapter 1 Introduction 1.1 Introduction to the three generations of image intensifier 1.1.1 three generations of the basic principle the 1.1.2 GaAlAsGaAs photocathode 1.1.3 microchannel plate (MCP) image intensifier distinguish 1.1.5 1.1.4 Integral sensitivity force. MTF1.1.6 SNR 1.2 three generations of low light level image intensifier 1.2.1 three generations of image intensifier applications and development in the world's development in the world's applications 1.2.2 three generations of image intensifier 1.3 1.4.1 GaAs photocathode material properties of the found and the characteristics of the GaAs photocathode overview of the development of GaAs photocathode 1.3.1 1.3.2 GaAs photocathode preparation 1.4 GaAs photocathode research status 1.4.2 GaAs photocathode activation process study 1.4.3 GaAs photocathode stability studies 1.4.4 GaAs photocathode surface model 1.5 and abroad GaAs the photocathode performance status 1.5.1 Foreign GaAs photocathode technical level status quo 1.5.2 domestic GaAs optoelectronic cathode technical level of the status quo in Chapter 2. GaAs and GaAlAs photocathode 2.1.1 GaAs 2.1 GaAs material nature of the physical and thermal properties of the material 2.1.2 GaAs resistivity and carrier concentration 2.1.3 GaAs carrier ionization rate of 2.1 .4 GaAs electron mobility. proliferation and life 2.1.5 GaAs hole mobilities. diffusion. and the energy band gap of life 2.1.6 GaAs 2.1.7 GaAs optical function 2.1.8 GaAs infrared absorption 2.1.9 GaAs the photoluminescence spectrum of defects and defect 2.1.10 GaAs infrared image Figure 2.1.11 general performance 2.2 2.2 GaAlAs GaAs the surface structure and the corrosion rate of oxidation 2.1.12 GaAs of 2.1.13 GaAs interface and contact materials. 1 GaAlAs defect levels 2.2.2 GaAlAs DX 2.2.3 GaAlAs defect centers photoluminescence spectra in 2.2.4 GaAlAs electron mobility 2.2.5 LPE GaAlAs carrier concentration 2.2.6 MOCVD GaAlAs carrier concentration 2.2.7 MBE GaAlAs carrier concentration 2.2.8 reactive ions and reactive ion beam etching speed on the GaAlAs 2.2.9 LPE GaAlAs optical function Chapter 3 GaAs photocathode photoelectric emission and spectral response theory 3.1 The GaAs photocathode photoemission process 3.1.1 photoelectron excitation 3.1.2 photoelectron to the cathode surface transport 3.1.3 photoelectron tunnel wearing surface barrier 3.2 GaAs photocathode electron energy distribution 3.2.1 transmission photocathode electron energy distribution 3.2.2 photocathode quantum efficiency of 3.3 GaAs the reflective photocathode electron energy distribution formula for the derivation of 3.3.1 reflective GaAs photocathode 3.3.2 the back light transmission-type GaAs photocathode 3.3.3 positive light transmission-type GaAs photocathode 3.3. consider L valley and hot electron emission quantum efficiency formula 3.3.5 consider the quantum efficiency of the front surface recombination velocity formula derivation 3.4 GaAs photocathode performance parameters of the quantu. N° de ref. de la librería NE030777

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Título: Optics and Photonics Series: GaAs ...

Encuadernación: Hardcover

Condición del libro:New

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