III-Nitride Devices and Nanoengineering (Hardcover)

Zhe Chuan Feng

ISBN 10: 1848162235 / ISBN 13: 9781848162235
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Hardcover. Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, f.Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. 476 pages. 0.816. N° de ref. de la librería

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Sinopsis: DEVICES, NANOSCALE SCIENCE AND TECHNOLOGIES BASED ON GAN AND RELATED MATERIALS, HAVE ACHIEVED GREAT DEVELOPMENTS IN RECENT YEARS. NEW GAN-BASED DEVICES SUCH AS UV DETECTORS, FAST P-HEMT AND MICROWAVE DEVICES ARE DEVELOPED FAR MORE SUPERIOR THAN OTHER SEMICONDUCTOR MATERIALS-BASED DEVICES.WRITTEN BY RENOWNED EXPERTS, THE REVIEW CHAPTERS IN THIS BOOK COVER THE MOST IMPORTANT TOPICS AND ACHIEVEMENTS IN RECENT YEARS, DISCUSS PROGRESS MADE BY DIFFERENT GROUPS, AND SUGGEST FUTURE DIRECTIONS. EACH CHAPTER ALSO DESCRIBES THE BASIS OF THEORY AND EXPERIMENT.THIS BOOK IS AN INVALUABLE RESOURCE FOR DEVICE DESIGN AND PROCESSING ENGINEERS, MATERIAL GROWERS AND EVALUATORS, POSTGRADUATES AND SCIENTISTS AS WELL AS NEWCOMERS IN THE GAN FIELD.SAMPLE CHAPTER(S)CHAPTER 1: AN OVERVIEW OF THE DEVELOPMENT OF MAJOR LIGHT SOURCES: FROM LIGHT BULBS TO SOLID STATE LIGHTING (1,331 KB)

Reseña del editor: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

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Título: III-Nitride Devices and Nanoengineering (...
Año de publicación: 2008
Encuadernación: Hardcover
Condición del libro: New

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Feng, Z C
Publicado por Imperial College Press (2008)
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Descripción Imperial College Press, 2008. Condición: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. No dust jacket. , 850grams, ISBN:9781848162235. Nº de ref. del artículo: 7195779

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Descripción United Kingdom: Imperial College Pr, 2008. Hardcover. Condición: New. Ship out 1-2 business day,Brand new,US edition, Free tracking number usually 2-4 biz days delivery to worldwide Same shipping fee with US, Canada,Europe country, Australia, please use your post office system to track the item, item will ship out from either LA or Asia,k. Nº de ref. del artículo: ABE-5194654261

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Descripción Cambridge University Press, U.S.A., 2008. Hardcover. Condición: Brand New. 1st Edition. US edition Brand New HARD COVER standard delivery. Nº de ref. del artículo: 001787

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Descripción 2008. HRD. Condición: New. New Book. Shipped from US within 10 to 14 business days. Established seller since 2000. Nº de ref. del artículo: TL-9781848162235

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Descripción Condición: New. Bookseller Inventory # ST1848162235. Nº de ref. del artículo: ST1848162235

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Publicado por Imperial College Press, United Kingdom (2008)
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Descripción Imperial College Press, United Kingdom, 2008. Hardback. Condición: New. Language: English . Brand New Book. Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. Nº de ref. del artículo: AAZ9781848162235

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Zhe Chuan Feng
Publicado por Imperial College Press (2008)
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Descripción Imperial College Press, 2008. HRD. Condición: New. New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. Nº de ref. del artículo: CA-9781848162235

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Publicado por Imperial College Press, United Kingdom (2008)
ISBN 10: 1848162235 ISBN 13: 9781848162235
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Descripción Imperial College Press, United Kingdom, 2008. Hardback. Condición: New. Language: English . Brand New Book. Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. Nº de ref. del artículo: AAZ9781848162235

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Publicado por Imperial College Press, United Kingdom (2008)
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Descripción Imperial College Press, United Kingdom, 2008. Hardback. Condición: New. Language: English . This book usually ship within 10-15 business days and we will endeavor to dispatch orders quicker than this where possible. Brand New Book. Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. Nº de ref. del artículo: BTE9781848162235

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Zhe Chuan Feng, Zhe Chuan Feng
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Descripción Imperial College Press. Hardback. Condición: new. BRAND NEW, III-Nitride Devices and Nanoengineering, Zhe Chuan Feng, Zhe Chuan Feng, Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. Nº de ref. del artículo: B9781848162235

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