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III-Nitride Devices and Nanoengineering (Hardcover)

Zhe Chuan Feng

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ISBN 10: 1848162235 / ISBN 13: 9781848162235
Nuevos Condición: New Encuadernación de tapa dura
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Descripción

Hardcover. Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, f.Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. 476 pages. 0.816. N° de ref. de la librería 9781848162235

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Detalles bibliográficos

Título: III-Nitride Devices and Nanoengineering (...

Año de publicación: 2008

Encuadernación: Hardcover

Condición del libro:New

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Sinopsis:

DEVICES, NANOSCALE SCIENCE AND TECHNOLOGIES BASED ON GAN AND RELATED MATERIALS, HAVE ACHIEVED GREAT DEVELOPMENTS IN RECENT YEARS. NEW GAN-BASED DEVICES SUCH AS UV DETECTORS, FAST P-HEMT AND MICROWAVE DEVICES ARE DEVELOPED FAR MORE SUPERIOR THAN OTHER SEMICONDUCTOR MATERIALS-BASED DEVICES.WRITTEN BY RENOWNED EXPERTS, THE REVIEW CHAPTERS IN THIS BOOK COVER THE MOST IMPORTANT TOPICS AND ACHIEVEMENTS IN RECENT YEARS, DISCUSS PROGRESS MADE BY DIFFERENT GROUPS, AND SUGGEST FUTURE DIRECTIONS. EACH CHAPTER ALSO DESCRIBES THE BASIS OF THEORY AND EXPERIMENT.THIS BOOK IS AN INVALUABLE RESOURCE FOR DEVICE DESIGN AND PROCESSING ENGINEERS, MATERIAL GROWERS AND EVALUATORS, POSTGRADUATES AND SCIENTISTS AS WELL AS NEWCOMERS IN THE GAN FIELD.SAMPLE CHAPTER(S)CHAPTER 1: AN OVERVIEW OF THE DEVELOPMENT OF MAJOR LIGHT SOURCES: FROM LIGHT BULBS TO SOLID STATE LIGHTING (1,331 KB)

Reseña del editor:

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

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