Imagen del editor

III-Nitride Devices and Nanoengineering (Hardcover)

Zhe Chuan Feng

0 valoraciones por Goodreads
ISBN 10: 1848162235 / ISBN 13: 9781848162235
Nuevos Condición: New Encuadernación de tapa dura
Librería: AussieBookSeller (SILVERWATER, NSW, Australia)

Librería en AbeBooks desde: 22 de junio de 2007

Cantidad: 1

Comprar nuevo
Precio recomendado: 198.00
Precio: EUR 202,20 Convertir moneda
Gastos de envío: EUR 31,43 De Australia a Estados Unidos de America Destinos, gastos y plazos de envío
Añadir al carrito

Descripción

Hardcover. Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, f.Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. 476 pages. 0.816. N° de ref. de la librería 9781848162235

Hacer una pregunta a la librería

Detalles bibliográficos

Título: III-Nitride Devices and Nanoengineering (...

Año de publicación: 2008

Encuadernación: Hardcover

Condición del libro:New

Acerca de

Sinopsis:

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.

Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.

This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Contents: High Pressure Bulk Crystal Growth of (Ga,Al)N (P Geiser et al.); Fabrication of GaN Light Emitting Diodes by Laser-Off Technique (C-F Chu et al.); High-Resolution Electron Microscopy Observations of GaN-Based Laser Diodes (M Shiojiri); Growth and Development of III-Nitride Photodetectors (U Chowdhury et al.); Laser Diodes Grown on Bulk GaN Substrate (P Perlin et al.); III-Nitride Lighting Emitting Diodes on Si (N C Chen & C F Shih); III-Nitride Light-Emitting Devices on Patterned Sapphire Substrates (D S Wuu et al.); Recent Trends in Indium Nitride Nanomaterials (A Ganguly et al.); and other papers.

"Sobre este título" puede pertenecer a otra edición de este libro.

Descripción de la librería

Ver la página web de la librería

Condiciones de venta:

We guarantee the condition of every book as it's described on the Abebooks web sites. If you're dissatisfied with your purchase (Incorrect Book/Not as Described/Damaged) or if the order hasn't arrived, you're eligible for a refund within 30 days of the estimated delivery date. If you've changed your mind about a book that you've ordered, please use the Ask bookseller a question link to contact us and we'll respond within 2 business days.

Condiciones de envío:

Please note that titles are dispatched from our UK and NZ warehouse. Delivery times specified in shipping terms. Orders ship within 2 business days. Delivery to your door then takes 8-15 days.

Todos los libros de esta librería

Métodos de pago
aceptados por la librería

Visa Mastercard American Express Carte Bleue

PayPal Transferencia Bancaria