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High-KMetal-Gate Devices for Future CMOS Technology

Stephan Abermann

ISBN 10: 3836465299 / ISBN 13: 9783836465298
Editorial: VDM Verlag
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Paperback. 180 pages. Dimensions: 8.9in. x 6.0in. x 0.5in.The present work addresses the investigation of high- dielectrics and their applicability in CMOS-devices, using metal-gate electrodes. The contents firstly include the deposition of zirconium dioxide and hafnium dioxide from the gas phase, using organometallic precursors, and their physico-chemical characterization. Furthermore, these material systems are investigated regarding their thermodynamical stability. In the following, MOS-capacitors are fabricated by the selective deposition of gate electrodes made from aluminum, molybdenum, nickel, or titanium-nitride, and characterized regarding their electrical behavior. Results within this work demonstrate that well balanced and correctly applied annealing of the devices clearly improves electrical behavior. We attribute these materials high potential to be applied in near-future CMOS-technology. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. N° de ref. de la librería 9783836465298

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Detalles bibliográficos

Título: High-KMetal-Gate Devices for Future CMOS ...

Editorial: VDM Verlag

Encuadernación: Paperback

Condición del libro: New

Tipo de libro: Paperback

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Sinopsis:

The present work addresses the investigation of high-? dielectrics and their applicability in CMOS-devices, using metal-gate electrodes. The contents firstly include the deposition of zirconium dioxide and hafnium dioxide from the gas phase, using organometallic precursors, and their physico-chemical characterization. Furthermore, these material systems are investigated regarding their thermodynamical stability. In the following, MOS-capacitors are fabricated by the selective deposition of gate electrodes made from aluminum, molybdenum, nickel, or titanium-nitride, and characterized regarding their electrical behavior. Results within this work demonstrate that well balanced and correctly applied annealing of the devices clearly improves electrical behavior. We attribute these materials high potential to be applied in near-future CMOS-technology.

About the Author:

Stephan Abermann wurde am 14.10.1978 in Innsbruck/Tirol geboren. Seine Kindheit und Jugend verbrachte er in Kirchberg/Tirol. Nach dem abgeschlossenen Studium der Werkstoffwissenschaften an der Montanuniversität Leoben, wechselte er an die Technische Universität Wien, wo er diese Dissertation verfasste, und seither lebt.

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