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Sinopsis
Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS‐SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano‐openingarray ‐patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
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Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
Reseña del editor
Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), printed single-sided, grade: -, University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
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- EditorialGRIN Publishing
- Año de publicación2011
- ISBN 10 3656083169
- ISBN 13 9783656083160
- EncuadernaciónTapa blanda
- IdiomaInglés
- Número de edición2
- Número de páginas36
- Contacto del fabricanteno disponible
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Electron Beam Lithography Process Optimization
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GRIN Verlag Dez 2011, 2011
ISBN 10: 3656083169
ISBN 13: 9783656083160
Nuevo
Taschenbuch
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior. 20 pp. Englisch. Nº de ref. del artículo: 9783656083160
Cantidad disponible: 2 disponibles
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Electron Beam Lithography Process Optimization : An Experimental Design Study
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior. Nº de ref. del artículo: 9783656083160
Cantidad disponible: 1 disponibles
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Electron Beam Lithography Process Optimization | An Experimental Design Study
Impresión bajo demandaLibrería: preigu, Osnabrück, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Electron Beam Lithography Process Optimization | An Experimental Design Study | Rohan Handa (u. a.) | Taschenbuch | Booklet | 20 S. | Englisch | 2011 | GRIN Verlag | EAN 9783656083160 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu Print on Demand. Nº de ref. del artículo: 106688518
Cantidad disponible: 5 disponibles