The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complex ity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen sion had to be utilized to realize the storage capacitor. The result ing leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device re search and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities con cerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconduc tor equations, discusses the physical models used in device simu lation, describes the discretization and some numerical methods for solving the differential equations. The application of the three dimensional simulation to VLSI device engineering is illustrated by a few specific examples.
"Sobre este título" puede pertenecer a otra edición de este libro.
EUR 29,73 gastos de envío desde Reino Unido a Estados Unidos de America
Destinos, gastos y plazos de envíoGRATIS gastos de envío en Estados Unidos de America
Destinos, gastos y plazos de envíoLibrería: BargainBookStores, Grand Rapids, MI, Estados Unidos de America
Paperback or Softback. Condición: New. Three-Dimensional Simulation of Semiconductor Devices 0.41. Book. Nº de ref. del artículo: BBS-9783034877329
Cantidad disponible: 5 disponibles
Librería: Lakeside Books, Benton Harbor, MI, Estados Unidos de America
Condición: New. Brand New! Not Overstocks or Low Quality Book Club Editions! Direct From the Publisher! We're not a giant, faceless warehouse organization! We're a small town bookstore that loves books and loves it's customers! Buy from Lakeside Books! Nº de ref. del artículo: OTF-S-9783034877329
Cantidad disponible: Más de 20 disponibles
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Condición: New. Nº de ref. del artículo: ABLIING23Mar3113020038645
Cantidad disponible: Más de 20 disponibles
Librería: Revaluation Books, Exeter, Reino Unido
Paperback. Condición: Brand New. reprint edition. 124 pages. German language. 9.02x5.99x0.40 inches. In Stock. Nº de ref. del artículo: x-3034877323
Cantidad disponible: 2 disponibles
Librería: Chiron Media, Wallingford, Reino Unido
PF. Condición: New. Nº de ref. del artículo: 6666-IUK-9783034877329
Cantidad disponible: 10 disponibles
Librería: Ria Christie Collections, Uxbridge, Reino Unido
Condición: New. In. Nº de ref. del artículo: ria9783034877329_new
Cantidad disponible: Más de 20 disponibles
Librería: Books Puddle, New York, NY, Estados Unidos de America
Condición: New. pp. 132. Nº de ref. del artículo: 26142272570
Cantidad disponible: 4 disponibles
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complex ity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen sion had to be utilized to realize the storage capacitor. The result ing leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device re search and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities con cerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconduc tor equations, discusses the physical models used in device simu lation, describes the discretization and some numerical methods for solving the differential equations. The application of the three dimensional simulation to VLSI device engineering is illustrated by a few specific examples. 124 pp. Deutsch. Nº de ref. del artículo: 9783034877329
Cantidad disponible: 2 disponibles
Librería: Majestic Books, Hounslow, Reino Unido
Condición: New. Print on Demand pp. 132. Nº de ref. del artículo: 135092197
Cantidad disponible: 4 disponibles
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complex ity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen sion had to be utilized to realize the storage capacitor. The result ing leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device re search and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities con cerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconduc tor equations, discusses the physical models used in device simu lation, describes the discretization and some numerical methods for solving the differential equations. The application of the three dimensional simulation to VLSI device engineering is illustrated by a few specific examples. Nº de ref. del artículo: 9783034877329
Cantidad disponible: 1 disponibles