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Sinopsis
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.
- Provides a complete and concise introduction to SRAM bitcell design and analysis;
- Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;
- Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;
- Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
"Sinopsis" puede pertenecer a otra edición de este libro.
De la contraportada
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.
- Provides a complete and concise introduction to SRAM bitcell design and analysis;
- Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;
- Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;
- Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
"Sobre este título" puede pertenecer a otra edición de este libro.
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Robust SRAM Designs and Analysis
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Robust SRAM Designs and Analysis
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Springer New York, 2014
ISBN 10: 149390244X
ISBN 13: 9781493902446
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Kartoniert / Broschiert
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Kartoniert / Broschiert. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a complete and concise introduction to SRAM bitcell design and analysisOffers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysisIncludes simulation set-ups for extract. Nº de ref. del artículo: 4213733
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Robust Sram Designs and Analysis
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Robust SRAM Designs and Analysis
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Robust SRAM Designs and Analysis
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Springer New York Aug 2014, 2014
ISBN 10: 149390244X
ISBN 13: 9781493902446
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Taschenbuch
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design. 180 pp. Englisch. Nº de ref. del artículo: 9781493902446
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Robust Sram Designs and Analysis
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Robust SRAM Designs and Analysis
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Springer New York, Springer New York, 2014
ISBN 10: 149390244X
ISBN 13: 9781493902446
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Taschenbuch
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design. Nº de ref. del artículo: 9781493902446
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Robust SRAM Designs and Analysis
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Springer-Verlag New York Inc., 2014
ISBN 10: 149390244X
ISBN 13: 9781493902446
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Singh:Robust SRAM Designs and Analysis, (eng)
Impresión bajo demandaLibrería: Brook Bookstore On Demand, Napoli, NA, Italia
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Condición: new. Questo è un articolo print on demand. Nº de ref. del artículo: 29649ec8a1971f8849af0c1f3b14e54f
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Robust Sram Designs and Analysis
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Springer-Verlag New York Inc., 2014
ISBN 10: 149390244X
ISBN 13: 9781493902446
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Tapa blanda
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Condición: New. This guide to Static Random Access Memory (SRAM) bitcell design and analysis meets the nano-regime challenges for CMOS devices and such emerging devices as Tunnel FETs. Offers popular SRAM bitcell topologies that mitigate variability, plus exhaustive analysis. Num Pages: 180 pages, 5 black & white tables, biography. BIC Classification: TDPB; TJF; TJFC. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 10. Weight in Grams: 285. . 2014. Paperback. . . . . Nº de ref. del artículo: V9781493902446
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