Artículos relacionados a Atomic Scale Characterization and First-Principles...
Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces (Springer Theses) - Tapa dura
Sinopsis
This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
"Sinopsis" puede pertenecer a otra edición de este libro.
De la contraportada
This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ß-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
This Doctoral Thesis has been accepted by the University of Illinois-Chicago, Chicago, USA.
"Sobre este título" puede pertenecer a otra edición de este libro.
Comprar nuevo
Ver este artículo
EUR 92,27
EUR 19,49 gastos de envío desde Alemania a España
Destinos, gastos y plazos de envío
Resultados de la búsqueda para Atomic Scale Characterization and First-Principles...
Imagen de archivo
Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
Publicado por
Springer New York, 2011
ISBN 10: 144197816X
ISBN 13: 9781441978165
Antiguo o usado
Tapa dura
Librería: Buchpark, Trebbin, Alemania
Calificación del vendedor: 5 de 5 estrellas
Condición: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher. Nº de ref. del artículo: 9300983/12
Cantidad disponible: 1 disponibles
Imagen del vendedor
Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces
Librería: moluna, Greven, Alemania
Calificación del vendedor: 4 de 5 estrellas
Gebunden. Condición: New. Nº de ref. del artículo: 4176435
Cantidad disponible: Más de 20 disponibles
Imagen del vendedor
Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
Publicado por
Springer New York Apr 2011, 2011
ISBN 10: 144197816X
ISBN 13: 9781441978165
Nuevo
Tapa dura
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Calificación del vendedor: 5 de 5 estrellas
Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. 124 pp. Englisch. Nº de ref. del artículo: 9781441978165
Cantidad disponible: 2 disponibles
Imagen de archivo
Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (Springer Theses)
Librería: Ria Christie Collections, Uxbridge, Reino Unido
Calificación del vendedor: 5 de 5 estrellas
Condición: New. In. Nº de ref. del artículo: ria9781441978165_new
Cantidad disponible: Más de 20 disponibles
Imagen del vendedor
Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
Publicado por
Springer New York, Springer US, 2011
ISBN 10: 144197816X
ISBN 13: 9781441978165
Nuevo
Tapa dura
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Calificación del vendedor: 5 de 5 estrellas
Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. Nº de ref. del artículo: 9781441978165
Cantidad disponible: 1 disponibles
Imagen del vendedor
Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
Publicado por
Springer New York, Springer US Apr 2011, 2011
ISBN 10: 144197816X
ISBN 13: 9781441978165
Nuevo
Tapa dura
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemania
Calificación del vendedor: 5 de 5 estrellas
Buch. Condición: Neu. Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ¿¿Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 124 pp. Englisch. Nº de ref. del artículo: 9781441978165
Cantidad disponible: 2 disponibles
Imagen de archivo
Atomic Scale Characterization and First-principles Studies of Silicon Nitride Interfaces
Librería: Revaluation Books, Exeter, Reino Unido
Calificación del vendedor: 5 de 5 estrellas
Hardcover. Condición: Brand New. 108 pages. 9.75x6.50x0.50 inches. In Stock. Nº de ref. del artículo: x-144197816X
Cantidad disponible: 2 disponibles
Imagen de archivo
Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (Springer Theses)
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
Calificación del vendedor: 5 de 5 estrellas
Condición: New. Nº de ref. del artículo: ABLIING23Mar2411530297451
Cantidad disponible: Más de 20 disponibles
Imagen de archivo
Atomic Scale Characterization and First-Principles Studies of SiN Interfaces (Hardcover)
Publicado por
Springer-Verlag New York Inc., New York, NY, 2011
ISBN 10: 144197816X
ISBN 13: 9781441978165
Nuevo
Tapa dura
Librería: Grand Eagle Retail, Mason, OH, Estados Unidos de America
Calificación del vendedor: 5 de 5 estrellas
Hardcover. Condición: new. Hardcover. This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline bSi3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. This book offers results that influence many high temperature and pressure applications. It provides findings that will offer increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Nº de ref. del artículo: 9781441978165
Cantidad disponible: 1 disponibles
Imagen de archivo
Atomic Scale Characterization and First-Principles Studies of SiN Interfaces (Hardcover)
Publicado por
Springer-Verlag New York Inc., New York, NY, 2011
ISBN 10: 144197816X
ISBN 13: 9781441978165
Nuevo
Tapa dura
Librería: AussieBookSeller, Truganina, VIC, Australia
Calificación del vendedor: 5 de 5 estrellas
Hardcover. Condición: new. Hardcover. This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline bSi3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. This book offers results that influence many high temperature and pressure applications. It provides findings that will offer increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. Nº de ref. del artículo: 9781441978165
Cantidad disponible: 1 disponibles