Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The internationally renowned authors highlight the interdependencies and trade-offs between practically important device parameters and discuss device scaling and scaling limits of CMOS and bipolar devices.
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Yuan Taur is a Professor of Electrical and Computer Engineering at the University of California, San Diego. He spent twenty years at IBM's T. J. Watson Research Center where he won numerous invention and achievement awards. He is an IEEE Fellow, Editor-in-Chief of IEEE Electron Device Letters, and holds thirteen US patents.
Tak H. Ning is an IBM Fellow at the T. J. Watson Research Center, New York, where he has worked for over 35 years. A Fellow of the IEEE and the American Physical Society and a member of the US National Academy of Engineering, he has authored more than 120 technical papers and holds 36 US patents. He has won several awards, including the ECS 2007 Gordon E. Moore Medal, the IEEE 1991 Jack A. Morton Award and the 1998 Pan Wen-Yuan Foundation Outstanding Research Award.
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